description ? with to-3pl package ? complement to type ttc5200 applications ? power amplifier applications ? recommended for 100w high fidelity audio frequency amplifier output stage pinning pin description 1 emitter 2 collector;connected to mounting base absolute maximum ratings( t a=2 5 ?? ) symbol parameter conditions max unit v cbo collector-base voltage open emitter -230 v v ceo collector-emitter voltage open base -230 v v ebo emitter-base voltage open collector -5 v i c collector current -15 a i b base current -1.5 a p c collector power dissipation t c =25 ?? 150 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? fig.1 simplified outline (to-3pl) and symbol pb free plating product TTA1943 150 watt silicon epitaxial planar pnp power transistors pb b c e 3 base base collector emitter TTA1943 ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 1/2 rev.08c
characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-50ma ;i b =0 -230 v v cesat collector-emitter saturation voltage i c =-8a i b =-0.8a -3.0 v v be base-emitter voltage i c =-7a ; v ce =-5v -1.5 v i cbo collector cut-off current v cb =-230v; i e =0 -5 | a i ebo emitter cut-off current v eb =-5v; i c =0 -5 | a h fe-1 dc current gain i c =-1a ; v ce =-5v 55 160 h fe-2 dc current gain i c =-7a ; v ce =-5v 35 f t transition frequency i c =-1a ; v ce =-5v 30 mhz c ob collector output capacitance f=1mhz;v cb =-10v 360 pf ? h fe-1 classifications r o 55-110 80-160 style 2: pin 1. base 2. collector 3. emitter dim a min max min max inches 28.0 29.0 1.102 1.142 millimeters b 19.3 20.3 0.760 0.800 c 4.7 5.3 0.185 0.209 d 0.93 1.48 0.037 0.058 e 1.9 2.1 0.075 0.083 f 2.2 2.4 0.087 0.102 g 5.45 bsc 0.215 bsc h 2.6 3.0 0.102 0.118 j 0.43 0.78 0.017 0.031 k 17.6 18.8 0.693 0.740 l 11.2 ref 0.411 ref n 4.35 ref 0.172 ref p 2.2 2.6 0.087 0.102 q 3.1 3.5 0.122 0.137 r 2.25 ref 0.089 ref u 6.3 ref 0.248 ref w 2.8 3.2 0.110 0.125 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: millimeter. 0.25 (0.010) m tb m j r h n u l p a k c e f d g w 2 pl 3 pl 0.25 (0.010) m tb s 123 ?b? ?t? q mechanical dimensions to-3pl TTA1943 ? 2006 thinki semiconductor co., ltd. http://www.thinkisemi.com/ page 2/2 rev.08c
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